| PART |
Description |
Maker |
| LT1671 LT1671CMS8 LT1671CS8 LT1671IS8 |
60ns, Low Power,Single Supply, Ground-Sensing Comparator
60ns, Low Power, Single Supply, Ground-Sensing Comparator
60ns/ Low Power/ Single Supply/ Ground-Sensing Comparator
|
Linear Technology Corporation
LINER[Linear Technology]
|
| K4F641612C K4F641612C-L K4F641612C-TC K4F641612C-T |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| 10DRA10 |
FRD - 1A 100V 60ns
|
NIEC[Nihon Inter Electronics Corporation]
|
| 10ERB20 |
FRD - 1A 200V 60ns
|
NIEC[Nihon Inter Electronics Corporation]
|
| KM44C4103C KM44C4003C KM44C4003CK-6 KM44C4003CKL-6 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HY51VS18163HG HY51V18163HGT-6 HY51V18163HGJ HY51V1 |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power
1M x 16Bit EDO DRAM 100万16 EDO公司的DRAM
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 50 ns, PDSO44
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 60 ns, PDSO44
Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor, Inc.
|
| MAX803SQ463T1G MAX803SQ438T1G NCP803SN263T1G NCP80 |
Very Low Supply Current 3−Pin Microprocessor Reset Monitor 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO3
|
ON Semiconductor
|
| MAX708TESA MAX706T MAX708TCSA MAX708SEPA MAX708SMJ |
3V Voltage Monitoring, Low-Cost, ?? Supervisory Circuits
3V Voltage Monitoring, Low-Cost, レP Supervisory Circuits 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDIP8
103SR Series Unipolar Hall-Effect Digital Position Sensor with 15/32 in cylindrical stainless steel housing; two hex nuts; 1 m [39.4 in] jacketed cable; current sinking output; and Vdc supply voltage
3V Voltage Monitoring / Low-Cost / P Supervisory Circuits
3V Voltage Monitoring, Low-Cost, P Supervisory Circuits
3V VOLTAGE MONITORING, LOW-COST, ヌP SUPERVISORY CIRCUITS
3V Voltage Monitoring Low-Cost P Supervisory Circuits
3V Voltage Monitoring, Low-Cost, μP Supervisory Circuits
|
Maxim Integrated Produc...
MAXIM INTEGRATED PRODUCTS INC
Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
Maixm
http://
MAXIM - Dallas Semiconductor
|
| HY51V17403HGJ-5 HY51V17403HGJ-6 HY51V17403HGJ-7 HY |
4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns
4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns
4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns
4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns, low power
4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power
4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power
|
Hynix Semiconductor
|
| EL2150 EL2150CS-T13 EL2150CS-T7 EL2150CW-T7 EL2150 |
Op Amp, Video, 125MHz, SR=275V/s, Low Power, Low Voltage, Single Supply, Clamping, 100mA Output, with High Speed Disable and Power-Down
125MHz Single Supply/ Clamping Op Amps
125MHz Single Supply, Clamping Op Amps 1 CHANNEL, VIDEO AMPLIFIER, PDSO5
125MHz Single Supply, Clamping Op Amps 1 CHANNEL, VIDEO AMPLIFIER, PDSO8
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
|
